Verfahren zur Herstellung glaspassivierter Halbleiterbauelemente

摘要

The semiconductor element mfr. has crystal orientated highly doped semiconductor layers (3,4) formed in the opposing surfaces of a semiconductor disc (1), before application of a marking layer (5). The semiconductor layer (3) and the masking layer (5) on one side of the semiconductor disc (1) are structured by the formation of recesses at a given orientation to the crystal orientation, with subsequent etching to form channels of defined width and depth and angled sides, filled with a glass paste after removal of the masking layer (5). USE/ADVANTAGE - Esp. for power semiconductor element or diode mfr. Reduced mfg. complexity and cost.