| 摘要 |
PURPOSE:To obtain a highly reliable multilayer interconnection substrate capable of releasing gas in its insulating layers and free from the breakdown of signal layers which affects the semiconductor device functions by utilizing a specially designed meshed metal layer. CONSTITUTION:A metal layer 3 and a signal layer 4 as a ground layer or a power source layer are laminated on an insulating substrate 1 through an insulating layer 2 by a thin film growing technology in a multilayer interconnection substrate. The metal layer is formed in a mesh state so that the void ratio of the layer is 5-80%. Hole parts 3a are provided in the metal layer 3, and the mesh state is obtained. When the insulating layer 2 is heat-treated, and hardened, gas is released through the hole parts 3a in the metal layer 3 even if the gas is yielded in the insulating layer 2. Thus a gas well is not formed beneath the metal layer 3 and an upheaved part is not yielded on the insulating layer 2 at all. The breakdown of the signal layer 4 caused by the stress of the upheaved part is not yielded at all. |
