Laser including monolithically integrated planar devices and processes for their preparation.

摘要

Monolithically integrated devices are disclosed in which a laser having a capping layer with a relatively high conductivity imparting ion concentration is laterally offset along a planar surface from a surface layer having a lower conductivity imparting ion concentration. The monolithically integrated layer and surface layer are formed by providing laterally offset channels in a planar substrate surface and selectively epitaxially growing the required laser layers and the surface layer in separate channels.