High resistivity CdTe crystal and process for producing the same.

摘要

A high-resistivity CdTe single crystal is provided wherein atomic ratio of Cd/Te is Te excessive and containing not more than 0.7 ppm (weight) In. As a process for its production, a process is provided which involves heating and cooling of a crystal-growing ampul to allow the growth of a CdTe single crystal held therein, characterized in that In as an impurity is added in an amount up to 1 ppm (by weight) in concentration.