发明名称 Planarization method.
摘要 <p>A liquid polymeric resin is applied over an irregular surface of a semiconductor substrate by first spinning followed by rotation of the substrate about an axis parallel to and spaced-apart from the plane of the substrate. Such a technique provides for planarization layer having enhanced planarity. When applied over an underlying insulating layer, the planarization layer will typically be etched back in order to planarize the insulating layer. Alternatively, the planarization layer may be formed directly over the semiconductor substrate, and an insulating layer formed over the planarization layer. In either case, the substrates are then ready for subsequent processing according to well known techniques, typically the formation of metallization layers over the insulating layer.</p>
申请公布号 EP0262024(A1) 申请公布日期 1988.03.30
申请号 EP19870402027 申请日期 1987.09.11
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 CLEEVES, JAMES M.
分类号 H01L21/302;H01L21/027;H01L21/3065;H01L21/3105;H01L21/312;H01L21/768 主分类号 H01L21/302
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