| 摘要 |
PURPOSE:To form a cubic boron nitride (CBN) film free from impurities by a simple method, by preheating a mixture of a gas contg. B with a gas contg. N by irradiation with IR, projecting high frequency waves on the preheated mixture to convert the mixture into plasma and depositing CBN on a heated substrate. CONSTITUTION:A gas contg. B such as B2H6 or BCl3 is mixed with a gas contg. N such as N2 or NH3 preferably in 0.1-10 atomic ratio of B/N and the mixture is preheated to 300-1,500 deg.C by irradiation with IR. High frequency voltage is applied to the preheated and pre-excited gaseous mixture to convert the mixture into plasma and further excitation, dissociation and ionization are carried out. Various kinds of molecules and atoms are produced and especially chemically active free boron and nitrogen are brought into a reaction by the action of heat energy of a substrate heated to 300-2,000 deg.C to form stable SP<3> bond and to deposit CBN on the substrate. |
