| 摘要 |
PROBLEM TO BE SOLVED: To form a bipolar transistor in a semiconductor memory while preventing increase of a memory cell area. SOLUTION: A region commonly formed to communicate with a source/drain region 16a of an MOS transistor is used as a link base region 16b, an emitter region is formed by implanting impurities through an opening of a bit line contact to thereby form a bipolar transistor. Further, intrinsic base and emitter regions 17 and 5 are formed by implanting impurities through the bit line contact opening to thereby form the bipolar transistor. The intrinsic base region 17 is formed deeper than the source/drain region 16a. In the impurity implantation, different impurities are used for the intrinsic base and link base regions 17 and 16b.
|
