| 发明名称 |
Dielectric thin film |
| 摘要 |
A high dielectric constant capacitor comprising a thin film deposited on a substrate, the thin film being composed of a mixture of a tantalum oxide and a titanium oxide wherein the ratio of Ti to Ta is in the range from 0.1 to 4 atomic percent.
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| 申请公布号 |
US4734340(A) |
申请公布日期 |
1988.03.29 |
| 申请号 |
US19860885020 |
申请日期 |
1986.07.14 |
| 申请人 |
SONY CORPORATION |
发明人 |
SAITO, MASAKI;MORI, TOSHIO |
| 分类号 |
C23C16/40;H01G4/08;H01G4/10;(IPC1-7):B32B19/00;B32B9/00 |
主分类号 |
C23C16/40 |
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