发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To form an electrode forming surface to a flat surface shape having excellent crystallinity and to improve electrical and optical characteristics and reliability by burying an irregular surface in a second stage crystal growth layer shaped through a vapor crystal growth method through a liquid crystal growth method. CONSTITUTION:A second stage crystal growth layer 3 is grown through a liquid crystal growth method, the surface section of the layer 3, a sawtooth shaped surface 35 section, is melted through treatment at a high temperature in the same furnace, and a gentle irregular-shaped clean surface 36 is formed previously. The surface 36 section is buried by a surface burying layer 5 through the liquid crystal growth method such as an LPE method, and the surface burying layer 5 is shaped onto the second stage crystal growth layer 3. The liquid crystal growth method such as the LPE method completely differs from a vapor crystal growth method such as a MOCVD method or an MBE method used for growing the second stage crystal growth layer 3, and does not hold the surface shape of a lower layer as it is, and flatly buries the surface of the lower layer, thus forming the surface to a flat (100) face having excellent crystallizability.
申请公布号 JPS6370588(A) 申请公布日期 1988.03.30
申请号 JP19860216335 申请日期 1986.09.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 KADOWAKI TOMOKO;KONNO NOBUAKI;IKUWA YOSHITO
分类号 H01S5/00;H01S5/042;H01S5/40 主分类号 H01S5/00
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