| 摘要 |
<p>PURPOSE:To manufacture easily a thin film transistor which makes a high-speed control possible, by a method wherein a gate electrode is formed on a light- transmitting insulation substrate, a gate insulation film and an operating semiconductor film are laminated thereon, and an electrode having a P<+> semiconductor film as a ground is formed in an offset region. CONSTITUTION:A P<+> semiconductor 7 of P<+>a-Si is formed by a P-CVD method wherein boron is doped from above a substrate 1, and a layer 10 of Ti, i.e., of metal, to be a second drain electrode is formed thereon. Then, a positive-type resist 12 is lifted off and thereafter a resist pattern 12-1 for isolating an element is formed. Lastly, with this resist pattern 12-1 used, the second drain electrode 10, a source electrode 6-1 and a first drain electrode 6-2 are etched by a phosphoric acid, and then an N<+> a-Si layer 5, an a-Si2/layer 4 and an SiN layer 3 of lower layers are etched by a carbon tetrafluoride gas plasma. Thereafter the resist pattern 12-1 is removed, and thus a thin film transistor element is obtained.</p> |
