| 摘要 |
PURPOSE:To obtain an image sensor which have uniform respective bits and excellent photoelectric conversion characteristics by a method wherein a light transmitting electrode is divided into individual electrodes corresponding to respective elements and at least the surface of the parts corresponding to the spaces between the individual electrodes are removed. CONSTITUTION:A chrome layer is applied to a glass substrate 1 by sputtering and patterned into a stripe shape to form a metal electrode 2 as a common electrode. Then, after an indium-tin oxide layer is formed by DC magnetron sputtering, resist R is applied and light transmitting electrodes 4 as individual electrodes are formed by patterning. Further, by using the pattern of the resist R as a mask, an amorphous silicon hydride layer 3' is etched with mixed gas of CF4 and O2 to form individually divided photoelectric conversion layers 3. In this contact type image sensor, a bright current is 10<-9> A mark while a dark current is 10<-13> A mark and hence a bright-dark ratio is about 10<4> and excellent photoelectric conversion characteristics can be obtained. |
