发明名称 |
FERROELECTRIC LIQUID CRYSTAL PANEL |
摘要 |
<p>PURPOSE:To improve a memory effect of a liquid crystal panel by depositing aluminum oxide by evaporation on a substrate from the direction diagonal thereto and executing orientation control of a ferroelectric liquid crystal. CONSTITUTION:Al2O3 is deposited by evaporation from the diagonal direction onto the substrate 92 on which a transparent electrode layer is provided. For example, the substrate 92 is set with inclination by an angle (e.g.: 85 deg.) with the vapor deposition direction from the perpendicular direction to the substrate in a bell-jar 91. Al2O3 is used for a vapor deposition source 93 and is heated by projecting an electron beam, etc. Fine projection groups of Al2O3 are thereby formed in a specified direction on the electrode layer of the substrate 92. The vapor deposition directions of the Al2O3 on the upper and lower substrates are anti-paralleled with each other to constitute the cell and the ferroelectric liquid crystal is sealed into the cell. The thickness thereof is preferably adjusted to <=5mum. The liquid crystal molecules are thereby oriented to the structure to cause the smallest elastic deformation and the liquid crystal panel having a high memory effect is obtd.</p> |
申请公布号 |
JPS6366537(A) |
申请公布日期 |
1988.03.25 |
申请号 |
JP19860212226 |
申请日期 |
1986.09.09 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KAMIMURA TSUYOSHI;OOBA SHIYUUKO;WAKITA HISAHIDE;ONISHI HIROYUKI;OOTA ISAO |
分类号 |
G09F9/35;G02F1/133;G02F1/1337 |
主分类号 |
G09F9/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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