发明名称 FERROELECTRIC LIQUID CRYSTAL PANEL
摘要 <p>PURPOSE:To improve a memory effect of a liquid crystal panel by depositing aluminum oxide by evaporation on a substrate from the direction diagonal thereto and executing orientation control of a ferroelectric liquid crystal. CONSTITUTION:Al2O3 is deposited by evaporation from the diagonal direction onto the substrate 92 on which a transparent electrode layer is provided. For example, the substrate 92 is set with inclination by an angle (e.g.: 85 deg.) with the vapor deposition direction from the perpendicular direction to the substrate in a bell-jar 91. Al2O3 is used for a vapor deposition source 93 and is heated by projecting an electron beam, etc. Fine projection groups of Al2O3 are thereby formed in a specified direction on the electrode layer of the substrate 92. The vapor deposition directions of the Al2O3 on the upper and lower substrates are anti-paralleled with each other to constitute the cell and the ferroelectric liquid crystal is sealed into the cell. The thickness thereof is preferably adjusted to <=5mum. The liquid crystal molecules are thereby oriented to the structure to cause the smallest elastic deformation and the liquid crystal panel having a high memory effect is obtd.</p>
申请公布号 JPS6366537(A) 申请公布日期 1988.03.25
申请号 JP19860212226 申请日期 1986.09.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAMIMURA TSUYOSHI;OOBA SHIYUUKO;WAKITA HISAHIDE;ONISHI HIROYUKI;OOTA ISAO
分类号 G09F9/35;G02F1/133;G02F1/1337 主分类号 G09F9/35
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