| 摘要 |
PURPOSE:To vary a threshold voltage without altering the shape of a transistor by forming diffused regions at positions separate from at least one source region of a P-channel or N-channel transistor in a channel width direction and connecting VCC or GND to its diffused region. CONSTITUTION:Diffused regions 13, 14 are provided at positions separate from at least one of source regions 15, 16 of complementary MOS transistors 7, 8 in a channel width direction by connecting to a power source 1 or a GND line 2, and the source regions 15, 16 are connected directly to the power source 1 or the GND line 2 as required. Thus, the potential supply to the source regions can be switched to supply it to a well region or a wafer substrate or from VCC or GND wiring region directly. Accordingly, a threshold voltage can be varied without altering the size of the transistor, and the circuit constants can be easily varied after the layout design is completed. |
