| 摘要 |
PURPOSE:To improve the photoelectric conversion efficiency of a second PIN junction of a tandem type cell and to further improve an optical deterioration resistance and heat resistance thereof for use in a long time by forming an I-type semiconductor by a vapor growth method using germanium chloride and hydrogenated silicon. CONSTITUTION:Nonsingle crystal semiconductors 3-5 containing hydrogen or halogen element for forming a first PIN junction are formed on a first electrode 2 on a substrate 1, and nonsingle crystal semiconductors 6-8 containing hydrogen or halogen element for forming a second PIN junction are formed on the semiconductors 3-5 or a light transmission ohmic contact electrode 20 on the semiconductors 3-5. In the manufacture of such a photoelectric converter, the I-type nonsingle crystal semiconductors 4, 7 for forming the first or second PIN junction of the side separated from a light irradiating surface are formed by mixing hydrogenated silicon and germanium chloride, and adding a light or plasma energy to form SixGe1-x by a vapor growth method. |
