| 摘要 |
PURPOSE:To attain a similar noise resistance to a conventional folded bit line structure and a similar integration to an open bit line structure by maintaining a sense amplifying sensitivity by connecting a global bit line and a sense amplifier having respectively the same length to the two input terminals of the sense amplifier. CONSTITUTION:Memory cells 1c, 1d selected by a word line W2 are respectively connected to the sense amplifiers 12b, 12a, detected and amplified. In such a case, to the one input terminal of the sense amplifier 12a, the global bit line 3a and a segment bit line 2a are connected and to the other input terminal, the global bit line 3b and a segment bit line 2b are respectively connected. To the one input terminal of the sense amplifier 12b, the global bit lines 3c, 3e, 3g and a segment bit line 2c are connected and to the other input terminal, the global bit lines 3d, 3f, 3h and the segment bit line are respectively connected. Thereby, the capacity of the two bit lines inputted to the sense amplifier is balanced and the intensity of a collected coupling noise is equal, so that the noise resistance is not deteriorated. |
