| 摘要 |
PURPOSE:To enable forming the deep well of a junction depth by limiting the extension in a transverse direction by thermal diffusion and to make a solid- state image sensor which has a longitudinal type overflow drain structure high density by making the first conductive type well except a deeper region with the first conductive type epitaxial layer. CONSTITUTION:A p-type region 13 is formed by introducing a p-type impurity in an n-type semiconductor substrate 6 by using a resist pattern 12 as a mask and then, a p-type region 14 which is to be made the deeper region of a p-well is formed by diffusion by heat treatment. Then, a p-type epitaxial layer 15 is grown at least on all the cell regions on the semiconductor substrate 6 and the p-well 4 consisting of the p-type region 14 and the p-type epitaxial layer 15 and has a selectively different depth junction is formed. Then, an n-type region 7 which makes a p-n junction photo diode, an n-type buried channel 1 of BCCD and a p<+>-type channel stopper 8 are formed respectively in the p-well 4 and a solid-state image sensor is manufactured by forming a gate electrode 10 and a light screen film 11 by interposing an insulating film 9. |
