| 摘要 |
PURPOSE:To enable improving the electrical characteristics of a power MOSFET and to contrive the higher integration of an element by reducing the area for forming the MOSFET by reducing a drain resistance. CONSTITUTION:A high concentration P-type region 6 and an SiO2 film 7 are formed by drive-in and then, a gate SiO2 film 8 and a poly Si film 9 are formed after all the SiO2 film 7 is removed. Then, a boron (B<+>) ion is implanted after the poly-Si film 9 is patterned and an SiO2 film 10 and a P-type region 11 for forming a channel region are formed by drive-in. Then, the SiO2 film 10 is patterned, an n-type region 12 as a source region is formed by implanting phosphorus (P<+>) ion by using the SiO2 film 10 as a mask, the poly-Si film 9 is made an n-type and is made a gate electrode. Then, after the SiO2 film 10 used as the mask for ion implantation is removed, an SiO2 film 13 is coated by CVD and the SiO2 film 13 is patterned. Then, a source electrode is formed by patterning after an Al film 14 is coated on all the surface. |
