| 摘要 |
A nonvolatile memory cell (1) utilizes a pair of cross-coupled, capacitively complementary, centrally disposed floating gate electrodes (11, 12). The cell (1) is written directly by the provision of complementary signals on a pair of program lines (22, 23), which lines are capacitively coupled to the floating gate electrodes (11, 12). The data state of the nonvolatile memory cell (1) is sensed by conduction in two bit lines (16, 17), the conductive states of the lines being determined by the charge transferred onto the two floating gate electrodes (11, 12) during the simultaneous but complementary programming of such electrodes. The advantages of the nonvolatile memory cell include high speed read sensing, write without a prior erase operation, single polysilicon fabrication capability, and memory margining capabilities. |
