METHOD FOR GROWING ELEMENTAL SEMICONDUCTOR SINGLE CRYSTAL THIN FILM

摘要

PURPOSE:To enable the growth of an elemental semiconductor single crystal thin film with an accuracy of the order of molecular layer, by introducing a gas containing the constituent element of the objective elemental semiconductor on to a substrate in a growth chamber, exhausting the gas and repeating the above steps. CONSTITUTION:A gate valve 2 is opened and a growth chamber 1 is evacuated with an ultra-high vacuum pump 3 until the pressure in the chamber is decreased to 10<-4>-10-2 Pa. A substrate 8 is heated with a heater 5 or an infrared lamp 6 to effect the thermal cleaning of the substrate. After raising the temperature of the substrate 8 a little, the valve 12 is opened to introduce a gas containing the constituent element of the elemental semiconductor into the growth chamber 1 for 1-60sec, the valve 12 is closed and the gas in the growth chamber 1 is exhausted for 1-120sec to effect the growth of a single molecular layer of an elemental semiconductor single crystal on the substrate 8. The operations are repeated under the same conditions to deposit the monomolecular layers on the substrate.