摘要 |
PURPOSE:To prevent the deterioration with the lapse of time of a shift register formed with a transistor using a multicrystal thin film by permitting a capacitor at a later stage to hold an output signal from a transfer gate FET. CONSTITUTION:If an input signal VIN is 'H' in an action phase, a gate point E in an inverter FET13 becomes 'H' through the transfer gate FET11, and the output F of the FET 13 becomes 'L'. At that time, the transfer gate FET15 is also turned on, and the point G voltage VG of the capacitor 16 becomes 'L' by following a point F voltage VF. If the signal VIN is 'L', the voltage VG becomes 'H'. Consequently the capacitor 16 holds the inverted signal of the signal VIN. |