| 发明名称 |
Semiconductor devices and laminates including phosphorus doped transparent conductive film |
| 摘要 |
A transparent conductive film formed on a transparent substrate of a thin film transistor or solar cell contains an element falling in Group III or V of the periodic table. The transparent conductive film is formed in contact with a semiconductor layer.
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| 申请公布号 |
US4733284(A) |
申请公布日期 |
1988.03.22 |
| 申请号 |
US19860911695 |
申请日期 |
1986.09.26 |
| 申请人 |
HOSIDEN ELECTRONICS CO., LTD. |
发明人 |
AOKI, SHIGEO |
| 分类号 |
H01L29/40;H01L29/45;H01L29/786;H01L31/00;H01L31/02;H01L31/0224;H01L31/042;H01L31/18;(IPC1-7):H01L29/46;H01L29/54;H01L29/78 |
主分类号 |
H01L29/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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