| 摘要 |
A semiconductor wafer one side of which has been coated with an ultraviolet sensitive material is exposed to light radiated from a rare gas-mercury discharge lamp. A rare gas-mercury discharge lamp filled with a rare gas such as xenon and mercury as principal luminous components thereof and capable of radiating light having the maximum peak wavelength at 365 nm is used as the lamp, and the coated side of the wafer is exposed, through a lens system having a high transmittance for light having a wavelength of 365 nm and a photomask, to the light radiated from the lamp so as to print a reduced image of the mask pattern on the coated side of the wafer. Use of the above-described rare gas-mercury discharge lamp allows to print a highly-integrated pattern having a narrow linewidth efficiently and in shorter exposure time owing to its high radiation intensity at 365 nm.
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