发明名称 |
Travelling-wave microwave device |
摘要 |
A travelling-wave transistor structure (50) with the input and output transmission lines (54,58) terminated with unmatched impedances (70,72,74;80,82,84) to improve high-frequency response by reflection and phase shift to provide constructive interference is disclosed. Preferred embodiments include a pi -gate (52,56) MESFET structure travelling-wave transistor with many periodically spaced gate feeding fingers (56) connecting gate (52) to gate transmission line (54) which parallels gate (52). This provides a compact structure and has large advantages at millimeter wave frequencies. Source (60) may be grounded by vias (61) or may pass over gate transmission line (54) by air bridges to a ground on the same surface as the MESFET.
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申请公布号 |
US4733195(A) |
申请公布日期 |
1988.03.22 |
申请号 |
US19860885908 |
申请日期 |
1986.07.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TSERNG, HUA Q.;KIM, BUMMAN |
分类号 |
H01L21/338;H01L29/812;H03F3/60;(IPC1-7):H03F3/60 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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