| 摘要 |
A semiconductor laser device comprises a semiconductor laser portion (17) including a double hetero structure and a vertical MIS-FET portion (18) form on, and in series with, the semiconductor laser portion (17). The vertical MIS-FET portion (18) includes an n-type GaAs layer (6), a p-type GaAs layer (7), an n-type GaAs layer (8), and a striped groove (31) having V-shaped cross-section formed from the top surface of the n-type GaAs layer (8) to the n-type GaAs layer (6). A metal gate electrode (11) is further provided on the top surface of the striped groove (31), on an insulating film (10). A current (41)flowing through the vertical MIS-FET portion (18) is changed according to a photo modulating signal applied to the metal gate electrode (11) and, a current (40) is also changed according to the current (41). Accordingly, a laser oscillation output of the semiconductor laser portion (17) is also changed to accomplish the optical output modulation of the semiconductor laser.
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