| 摘要 |
PURPOSE:To lower dark currents at the time of the reverse bias of a photodiode by forming an amorphous silicon layer and an indium oxide-tin oxide layer onto a titanium layer and a titanium nitride layer as two-layer structure shaped onto an insulating substrate. CONSTITUTION:Titanium is applied onto an insulating substrate 1 such as glass through reactive sputtering using Ar as a sputtering gas as a lower metal, and titanium nitride is applied through reactive sputtering employing Ar and N2 as a sputtering gas, thus forming the two-layer structure of a Ti layer 2a and a TiN layer 2b. The layers 2a, 2b are patterned, an amorphous silicon layer 3 is shaped through a plasma CVD method, and an indium oxide-tin oxide layer 4 is formed as a transparent electrode through evaporation. |
