| 摘要 |
PURPOSE:To obtain a salicide transistor and a memory cell storage device, which has a high-melting-point film as a capacitor insulating film, by forming a transfer gate electrode having a sidewall on a semiconductor substrate, forming the high-melting-point metal film on the entire surface, and performing heat treatment in an oxidizing atmosphere. CONSTITUTION:After an element isolation region 4 is formed on a semiconductor substrate, a gate oxide film 2 is formed. After a polysilicon gate 1 is formed, a sidewall 7 of a silicon oxide film is formed, and an n<+> diffused region 3 is formed. Then, the high-melting-point metal is formed, and heat treatment is performed in an oxidizing atmosphere. The high-melting point metal film on the element isolation region 4 and the sidewall 7 is oxidized, and an oxide film 5 of the high-melting-point metal is obtained. Silicide reaction occurs at an interface with silicon. A transfer gate has a salicide structure owing to a silicide 8 formed at this time. In the region, where a capacitor is formed, the oxide film 5 of the high-melting-point metal, which is formed on the surface, is used as a capacitor insulating film. |
