| 摘要 |
PURPOSE:To enable an insulating layer to be selectively formed with high dimemsional precision by a method wherein a photoresist pattern is formed in gradually wider region so that a photomask used after the second time photoetching process may cover the insulating layer formed on the lower part. CONSTITUTION:Film circuit patterns 2b are formed on a substrate 1 to be coated with a heat resistant resin 3 for drying up; after coating, dryetching and exposure of positive type photoresist, the formation of photoresist pattern 4 and the etching of heat resistant resin 3 are simultaneously performed using a developer of photoresist before the photoresist pattern 4 is peeled off and dried up, then the surface of photoresist pattern 4 is coated with another heat resistant resin 5 meeting the same requirements to perform the formation of another photoresist pattern 6 and the etching process of heat resistant resin 5 through the same procedures. At this time, the photoresist pattern 6 is formed larger than the photoresist pattern 4 to cover the heat resistant resin 3 processed by a photoresist pattern 4. Finally, the photoresist pattern 6 is peeled off and resin-cured to complete the formation of a resin insulating layer. |
