发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide techniques of restraining noises from diffusing and making an integrated circuit operate stably. SOLUTION: A shield metal layer 31 fixed at a ground level or a power supply voltage level is interposed between a semiconductor substrate 52 and a signal wiring layer 54. Noises emitted from the semiconductor substrate 52 are blocked by this shield metal layer 31 so as not to be transmitted from the semiconductor substrate 52 to the signal wiring layer 54. A capacitor is formed between shield metal layers, and a power supply voltage can be stabilized by the capacitor.
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申请公布号 |
JP2000286385(A) |
申请公布日期 |
2000.10.13 |
申请号 |
JP19990087413 |
申请日期 |
1999.03.30 |
申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
NAKANO MINORU;SHIBATA HISAO |
分类号 |
H01L21/822;H01L21/82;H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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