发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide techniques of restraining noises from diffusing and making an integrated circuit operate stably. SOLUTION: A shield metal layer 31 fixed at a ground level or a power supply voltage level is interposed between a semiconductor substrate 52 and a signal wiring layer 54. Noises emitted from the semiconductor substrate 52 are blocked by this shield metal layer 31 so as not to be transmitted from the semiconductor substrate 52 to the signal wiring layer 54. A capacitor is formed between shield metal layers, and a power supply voltage can be stabilized by the capacitor.
申请公布号 JP2000286385(A) 申请公布日期 2000.10.13
申请号 JP19990087413 申请日期 1999.03.30
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 NAKANO MINORU;SHIBATA HISAO
分类号 H01L21/822;H01L21/82;H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L21/822
代理机构 代理人
主权项
地址
您可能感兴趣的专利