| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric conversion module of high long-period reliability, wherein bonding of an Si-Ge semiconductor to a carbon electrode as well as to a carbon electrode, soldering material, and metal electrode is satisfactory. SOLUTION: The powder of an Si-Ge semiconductor is allowed to contact a carbon electrode having a thermal expansion factor 77-150% of the Si-Ge semiconductor, which is kept at a temperature lower than solidus line temperature of the Si-Ge semiconductor plus 30 K, so that the Si-Ge semiconductor powder is sintered, a plurality of Si-Ge semiconductor devices wherein the Si-Ge semiconductor 1 is bonded to the carbon electrode 2 are placed side by side, and adjoining carbon electrodes 2 of Si-Ge semiconductor device are connected with a metal electrode 5 via a soldering material 4.
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