| 摘要 |
PURPOSE:To contrive to become complete the connection of a bonding pad and a fine metal wire by forming the bonding pad in a recessed form. CONSTITUTION:An Si oxide film 3 formed on a semiconductor substrate 2 is formed in a stepped form and a pad 4, which is formed on this and consists of Al, is formed in a recessed form. In case a fine metal wire 5 is fixed by pressure on the pad 4, a contact bonding part 6 is formed at the central part of the pad even the case where the positioning accuracy is bad and the fine metal wire 5 strikes on the peripheral part of the pad 4, because the fine metal wire 5 is led to the bottom part of the central part from the slant part of the pad 4. Thereby, the area of the connection part of the fine metal wire 5 and the pad 4 does never become smaller and the connection becomes a complete one. Moreover, from a fact that the contact bonding part 6 is formed at the central part of the pad 4, a protective film 1 is prevented from destruction. |
