| 摘要 |
PURPOSE:To prevent the increase in resistance value at step parts and to improve a signal transmitting speed, by making a first silicide layer to remain only at the step parts, and depositing a second silicide layer. CONSTITUTION:A first conductor layer 3 forms a capacitor part. An insulating layer 4 is formed so as to cover the layer 3. Thus step parts are formed at end parts 5 and 6 of the first conductor layer 3. Thereafter a polycrystalline silicon layer 8 is deposited so as to form a word line having a polycide structure. Phosphorus is thermally diffused into the polycrystalline silicon layer. A thin oxide film 10 is formed by thermal oxidation. Then a first silicie layer 11 is deposited by a sputtering method. Thereafter, the entire surface of the first silicide layer 11 is etched by using anisotropic reactive etching technology. Remnants 12 and 13 of the first silicide layer are obtained only at the parts of the step parts 5 and 6. Thereafter, the oxide film 10 for a stopper, which is not required any more, is removed by treatment with HF based chemical. Then a second silicide layer 14 is deposited by sputtering. |
