| 摘要 |
<p>A method and means for high-rate etching a material is disclosed including the steps of disposing a gas mixture of a fluorine-containing molecule and H2 over the surface of a material to be etched; and laser dissociating this fluorine-containing molecule in the gas mixture to cause very fast etching of the material surface. In a preferred embodiment, the fluorine-containing molecule is chosen from the group of NF3, SF6, and COF2, and the surface to be etched is unmasked silicon.</p> |
