A METHOD OF PRODUCING A SEMICONDUCTOR DEVICE.

摘要

A semiconductor device (G) is manufactured in the following process: (A) two insulating films of different chemical properites, e.g., SiO2 (12) and Si-N (11), are formed on a GaAs substrate (1) with a conducting layer (5). (B) A photoresist pattern (21) is formed. (C) The top layer (11) is removed by reactive ion etching with CF4 gas plasma. (D) The bottom layer (12) is removed by wet etching. (E) Ohmic electrodes (3) are formed by lift-off method. (F) Another Si-N film is formed on top. (G) The above process is repeated and a gate electrode (2) and a lower wiring layer (4) are formed.