发明名称 |
A METHOD OF PREPARING SEMICONDUCTOR SUBSTRATES |
摘要 |
A new method for GaAs substrate preparation which significantly reduces the formation of oval defects during MBE growth of selectively doped n-AlxGa1-xAs/GaAs heterostructures. The method simply requires treatment in H2SO4 after mechano-chemical polishing in NaOCl solution and generation of a protective surface oxide during in soldering. Routinely a density of oval defects of less than 200 cm-2 is achieved for 2- mu m thick heterostructures. The efficiency of the new preparation procedure is demonstrated by 2DEG mobilities in excess of 106 cm2/Vs at 6K obtained with a spacer width as narrow as 18 nm. |
申请公布号 |
EP0226931(A3) |
申请公布日期 |
1988.03.16 |
申请号 |
EP19860117075 |
申请日期 |
1986.12.08 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
FRONIUS, HANS;FISCHER, ALBRECHT;PLOOG, KLAUS |
分类号 |
H01L21/203;H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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