| 摘要 |
PURPOSE:To stabilize the operation of an FET while reducing the stepped section of a semiconductor layer by positioning a substrate region in the FET onto a thin insulating film on a semiconductor substrate or a diffusion layer formed into the substrate and supplying the semiconductor substrate or the diffusion layer under the thin insulating film with fixed voltage. CONSTITUTION:A substrate region 15 in an FET for switching functions as a back gate through a thin insulating film 17 by a P-type region 13 connected to a cell plate 16. when a semiconductor layer is grown for shaping the FET, the thin insulting film 17 is only formed as a stepped section. Accordingly. the FET for switching is not operated unstably because the region 13 giving a back bias is arranged just under the FET through the thin insulating film 17, and the excellent semiconductor layer can be shaped easily because the stepped section of the semiconductor layer forming the FET can be reduced. |
