| 摘要 |
PURPOSE:To enable excellent inter-element isolation easily by mesa-etching a multilayer compound semiconductor layer for light reception or light emission on a substrate and forming a high-resistance compound semiconductor layer with a deep notch around the multilayer compound semiconductor layer through an organo metallic chemical vapor deposition method. CONSTITUTION:An n-type InP layer 13, an InGaAs non-doped layer 14 and a p-type InP layer 15 are grown on an n-type InP substrate 1', an SiO2 film 16 is grown and patterned to a striped shape, the layers 13, 14, 15 are mesa- etched, using the film 16 as a mask, and an eave section 16A is shaped by adjusting the side-etching of a mesa section. Deep notches l7A are formed together with a high resistance InP layer 17 containing Fe through an organo metallic chemical vapor deposition method, the SiO2 film 16 is removed, and a p-side electrode 18 and an n-side electrode 19 are shaped. Accordingly, elements can be isolated excellently by the high resistance InP layer 17 formed and the deep notches 17A. |
