A double heterostructure light emitting diode.

摘要

A double heterostructure light emitting diode comprises a p-active layer (13,14) and n and p-cladding layers (12,15) respectively provided on the sides of the p-active layer. The p-active layer is so doped with p-impurity that the concentration thereof is higher in a region (13) proximate to the p-n junction between the p-active layer and the n-cladding (12) layer. As a result, the response time is shortened and light output is increased.