发明名称 |
METHOD OF FORMING AN ALIGNMENT MARK |
摘要 |
A method of forming an alignment mark for a semi-conductor wafer including the steps of forming an insulating film or a polycrystalline silicon film on a scribe line region of said semiconductor wafer, and providing a plurality of parallel grooves in the insulating film or the polycrystalline silicon film to form a plane reflection type diffraction grating. |
申请公布号 |
EP0230648(A3) |
申请公布日期 |
1988.03.16 |
申请号 |
EP19860117956 |
申请日期 |
1986.12.23 |
申请人 |
NEC CORPORATION |
发明人 |
HONTO, NOBUO C/O NEC CORPORATION |
分类号 |
H01L21/68;G03F9/00;H01L21/027;H01L21/30;H01L21/67;H01L23/544;(IPC1-7):H01L21/00;H01L23/54 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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