| 摘要 |
PURPOSE:To mass-produce light-emitting devices displaying pure band range emission by a method wherein a low-resistance n-type single crystal thin-film and a non-doped high-resistance single crystal thin-film are each grown onto a single crystal substrate in an epitaxial manner, and a p-type dopant is added to the high-resistance thin-film and annealed and activated. CONSTITUTION:A low-resistance n-type single crystal thin-film 2 is grown onto a single crystal substrate 1 in an epitaxial manner, and a non-doped high- resistance single crystal thin-film 3 is grown in the epitaxial manner. A p-type dopant is added to the high-resistance thin-film 3 by using an ion implantation method, and the added dopant is activated through annealing, thus forming an excellent p-n junction. Accordingly, ohmic contacts 6 and 7 are shaped, a lead is lead out, and voltage is applied in the forward direction, thus acquiring pure band range emission while largely improving mass productivity. |
