发明名称 TELLURIUM-BASE SPUTTERING TARGET AND ITS PRODUCTION
摘要 PURPOSE:To produce the titled target wherein crack, peeling and local melting are not caused during sputtering by heat-treating the sintered body of a powdery raw material contg. specified amount of tellurium at specified temp. and specifying both irreversible expansion coefficient and relative density. CONSTITUTION:A powdery raw material contg. >=50wt% Te is made to a sintered body by a hot press method and this sintered body is heat-treated in a range of 200 deg.C or more and the temp. less than the temp. starting fusion. Further heat-treatment time is regulated to about 30min or more and Ar, He, H2, and N2, etc., are used as the gaseous atmosphere and the pressure is regulated to about 1X10<4>Pa or more. Thereby irreversible expansion coefficient caused by heating becomes 0.1% expressed in terms of linear expansion coefficient in case it is heated at 330 deg.C for 5hr, and a target having >=90% relative density is obtained. The peeling of both the target material and a packing plate, crack and local melting, etc., of the target material are prevented from being caused.
申请公布号 JPS6360273(A) 申请公布日期 1988.03.16
申请号 JP19860201759 申请日期 1986.08.29
申请人 TOSOH CORP 发明人 SHIBUTAMI TETSUO;IWAMOTO TETSUSHI;KAWAKAMI MASARU;OIKAWA TOMOYUKI;KATO AKIYOSHI
分类号 C23C14/34 主分类号 C23C14/34
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