| 摘要 |
PURPOSE:To increase the degree of freedoms in a process manner by converting in advance at least surface region of a silicon in contact with a metal to an amorphous silicon. CONSTITUTION:An N-type well 2, a gate oxide film 3, a gate electrode 4 and separated oxide films 5 and 6 are formed on an Si substrate 1, a hole is formed in a source or drain region, a boron-doped amorphous Si 7 is deposited, the whole surface is covered with a resist film, the Si remains only on the source 8, drain 9 by ion etching, and a metal titanium 10 is deposited. Thereafter, a Ti silicide 11 is formed on the source 8, drain 9 in nitrogen N2, unreacted Ti and Ti nitride are selectively etched on the oxide film, the Si 7 is crystallized as crystalline Si 12 in argon to form a P-type conductive layer 13. An interlayer protective PSG film 14 and an electrode 15 are formed as a P-type MOSFET. Thus, the degree of freedoms of designing the process can be increased. |
