| 摘要 |
A semiconductor laser chip having a buried heterostructure comprising a semiconductor substrate and a light emitting portion wherein the active layer and buried layers of the light emitting portion are disposed to be on only a portion of the semiconductor substrate. By virtue of this arrangement, the probability of occurrence of VTH effects can be reduced. Also, the occurrence of the junction short-circuits resulting from an overhanging electrode or from deposition of foreign matter can be reduced.
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