| 发明名称 |
Three plate integrated circuit capacitor |
| 摘要 |
A capacitor is described having a very low voltage coefficient of capacitance and a relatively large capacitance per unit area. A process is detailed for forming such a capacitor on an IC. The process is fully compatible with conventional IC processing and does not add substantially to the number of steps.
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| 申请公布号 |
US4731696(A) |
申请公布日期 |
1988.03.15 |
| 申请号 |
US19870053764 |
申请日期 |
1987.05.26 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
HIMES, PETER G.;LIPPERT, JOHN A. |
| 分类号 |
H01L29/92;(IPC1-7):H01G4/10;H01G7/00;H01L21/225 |
主分类号 |
H01L29/92 |
| 代理机构 |
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代理人 |
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| 主权项 |
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