| 摘要 |
In a Bloch-line memory wherein a magnetic film comprises a first and a second major line and a minor loop portion defined between the first and second major lines, successive presence and absence of magnetic bubbles being transferred along the first major line in response to a plurality of information signals, the information signals being memorized as vertical Bloch line pairs in domain walls of stripe-domains generated in the minor loop portion, the memorized vertical Bloch line pairs being propagated towards the second major line and being read out as bubbles into the second major line, the magnetic film is formed with a plurality of endless long grooves at desired locations in the minor loop portion and an endless stripe-domain is generated and stabilized in each endless long groove, so that the propagation of vertical Bloch line pairs can be performed step by step. The magnetic film is further formed with a first and a second groove on both sides of the minor loop portion, and a first and a second connecting grooves to connect each endless groove to the first and second grooves on which the first and second major lines are disposed. The write-in operation and the read-out operation are performed by partially expanding the endless stripe-domain into corresponding one of the first and second connecting grooves and by carrying out the domain chopping technique therein.
|
