发明名称 Semiconductor connection and crossover apparatus
摘要 A ceramic member with thick film conductors is mounted on a heat sink and a silicon integrated circuit (chip) is placed through a hole in the ceramic member and is soldered by a back surface (the substrate) to the heat sink. A tape automated bonding lead frame is used to provide conductors that are soldered to bonding pads on the ceramic member and are compression bonded to conductive bumps on the chip and to provide other conductors that are soldered to pads on the ceramic member and crossover a front active surface of the chip. These crossover conductors are air isolated from the chip and allow an increase in interconnect density. The attachment of the semiconductor substrate to the heat sink provides good heat dissipation.
申请公布号 US4731700(A) 申请公布日期 1988.03.15
申请号 US19870013959 申请日期 1987.02.12
申请人 DELCO ELECTRONICS CORPORATION 发明人 WOODWARD, GARY K.;BELCHER, STEPHEN R.
分类号 H01L23/36;H01L23/538;H01L25/18;(IPC1-7):H05K7/20 主分类号 H01L23/36
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