| 摘要 |
<p>PURPOSE:To permit desired adjustment of a difference in residual film rate between the peripheral part of a chip and parts except the peripheral part of the chip by using a partial light shielding mask and projecting light in such a manner as to provide a difference between the exposure in the peripheral part of the chip and the exposure in the parts except the peripheral part of the chip and exposing again the resin film. CONSTITUTION:A negative type dyeable photosensitive resin is coated on a wafer segmented to plural pieces of the chips 9 and is dried. A photomask 12 is brought into tight contact with or proximity to the negative type dyeable photosensitive resin film 10 coated on the wafer and light 13 is projected thereto to make the 1st exposure of the resin film 10. The partial light shielding mask 15 is then used and the light 13 is so projected as to provide the difference between the exposure in the peripheral part 16 of the chip and the exposure in the parts except the peripheral part of the chip to make the 2nd exposure of the resin film 10. The uncured parts are thereafter developed and dissolved to form the pattern of the negative dyeable resin which is the residual film on the chip 9. The difference between the residual film rate in the peripheral part of the chip and the residual film rate in the parts except the peripheral part of the chip is thereby adjusted as desired.</p> |
