| 摘要 |
PURPOSE:To reduce the interface resistance between a clear electrode and a P-type layer and avoid recombination of carriers in the interface between the P-type layer and an I-type layer by a method wherein the P-type layer is composed of a P1 layer containing crystal and a P2 layer contacted with the I-type layer and made of amorphous only. CONSTITUTION:A clear electrode 2 made of tin oxide is formed on a glass substrate 1 and a P1 layer 7, a P2 layer 8, an I-type layer 4 and an N-type layer 5 are successively formed on it by radio frequency plasma CVD. It is recommended to make the P1 layer contain 100-5% of crystal and, if the crystal content is less than 5%, the resistance of this layer becomes less than 10<-4>OMEGAcm<-1> and the boundary resistance can not be reduced. Moreover, if the P1 layer is so formed as to have its crystal content gradually decline toward the P2 layer, the boundary level between the P1 layer and the P2 layer is also reduced and more excellent characteristics can be achieved. With this constitution, the boundary resistance between the clear electrode and the P-type layer can be reduced and, at the same time, the interface level between the P-type layer and the I-type layer can be reduced so that recombination of carriers can be avoided. |
