| 摘要 |
PURPOSE:To form a deposited film having excellent quality to a uniform thickness by supplying a precursor by a gaseous raw material and gas for constituting an active species without mixing the same and bringing these gases into reaction in a film forming space before a substrate at the time of forming the deposited film on the substrate in a vacuum reaction chamber. CONSTITUTION:The inside of the reaction chamber 101 in which the substrate 103 consisting of a metal, glass, synthetic resin, etc., is placed is evacuated to a vacuum and the substrate 103 is heated to a relatively low temp. of 50-350 deg.C by a heater 104. The gaseous raw material for forming the deposited film is passed through the inside of the cracking space B in an IR image furnace 109 from a pipe 108 to form the precursor of the deposited film and the precursor is supplied through the cracking excitation space C by a pipe 110 to an association space D just before the film forming space A. On the other hand, a gaseous mixture composed of a gas for forming the active species and carrier gas such as H2 is fed in the space C from a pipe 112 without being mixed with the precursor in an activation energy introducing pipe 113 and the active species is formed by the microwaves from a microwave oscillator 114 and is mixed with the precursor so as to react therewith in the space C. The deposited film is thus uniformly formed on the surface of the substrate 103 in the film forming space A with good reproducibility. |
