发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT USING DIODE |
摘要 |
PURPOSE: An electrostatic discharge protection circuit using a diode is provided to perform only a forward operation for generating low power by using the diode. CONSTITUTION: A protection circuit(200) is used for protecting a circuit element(220) from electrostatic discharge stress of a pad input terminal(210). The protection circuit(200) is formed with the first and the second diode protection circuit portions(201,202). The first diode protection circuit portion(201) is arranged between the pad input terminal(210) and an input voltage terminal(VDD). The second diode protection circuit portion(202) is arranged between the pad input terminal(210) and a substrate terminal(VSS). The input voltage terminal(VDD) is used for applying bias to a high density drain region of a field effect transistor. The substrate terminal(VSS) is connected with a semiconductor substrate including the protection circuit(200) and the circuit element(220).
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申请公布号 |
KR20020085101(A) |
申请公布日期 |
2002.11.16 |
申请号 |
KR20010024382 |
申请日期 |
2001.05.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BONG, WON HYEONG;KWON, GYU HYEONG |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/06;H02H9/00;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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