| 摘要 |
PURPOSE:To decrease the distance between an MOSFET and a capacitive element, by burying a polycrystalline silicon layer connecting the MOSFET to the capacitive element within a silicon substrate including the surface region of the capacitive element. CONSTITUTION:A groove 2 is formed by excavating the surface of polycrystalline silicon 14 in a groove 1 and a surface region of a silicon substrate 11 adjacent to the groove. The groove 2 is shallower than the groove 1. Polycrystalline silicon 15 is deposited selectively only within the groove 2. After an insulation film 15a is formed on the surface of the polycrystalline silicon 15, polycrystalline silicon 16 for providing a gate electrode is deposited on an insulation film 13 on the substrate 11. Using the polycrystalline silicon 16 as a mask, ions of arsenic atoms for example are implanted to form doped regions 18a and 18b on the surface of the silicon substrate 11. Since the polycrystalline silicon 15 is connected to the silicon substrate 11 by its side faces, the doped region 18b is electrically connected to the polycrystalline silicon 14 within the groove 14. |
